Fabless Platform for Wafer Process Integration

TOYOKOU CHEMI (Japan), an affiliated company of AST, is positioned as a fabless, proposal-driven platform. It does not operate its own wafer fabrication facilities; instead, it integrates foundry resources across Japan and other parts of Asia to provide process solution design and manufacturing resource matching. The platform engages from the early stages of projects, supporting requirement analysis and process flow planning, and advances execution in coordination with partner fabs.

Leveraging Japan’s strengths in advanced materials and precision processing, together with manufacturing capabilities across Asia, TOYOKOU focuses on H-cut and thinning-bonding process routes. It supports heterogeneous integration of semiconductor and related materials, covering 4-, 6-, 8-, and 12-inch wafer projects. Process flows and foundry resources are selected and coordinated based on specific project requirements.

In terms of services, the platform provides foundry coordination for heterogeneous bonding and full-wafer processing, while also supporting upfront technical evaluation and solution development. Supported material systems include SOI, POI, SiC (single-crystal/polycrystalline structures), TFLN/TFLT, SiCOI, and other customized substrates, with applications in photonics, power devices, MEMS, and advanced packaging.

Process & Technology Coordination
Based on the established capabilities of partner fabs, TOYOKOU coordinates the implementation of process routes including room-temperature (RT) bonding, thermo-compression bonding, temporary bonding, and surface-activated bonding. Specific approaches are defined according to project requirements.

Capacity & Delivery
Relying on partner production lines, the platform supports prototyping and mid-volume manufacturing. The current delivery capability corresponds to approximately 10,000 wafers per year, subject to project requirements and resource allocation.

Team & Quality Systems
The platform focuses on project management and technical coordination. Manufacturing and quality control are executed by partner fabs in accordance with their respective quality management systems, including ISO 9001, IATF 16949, ISO 14001, and ISO 45001.

Composite Wafer

N-type SiC Composite Wafer

Item Specification Item Specification
Diameter 150 ± 0.2 mm Front (Si-face) roughness Ra ≤ 0.2 nm (5 μm × 5 μm)
SiC Type 4H Edge Chip, Scratch, Crack (visual inspection) None
SiC Resistivity 0.015–0.025 Ω·cm TTV ≤3 μm
Transfer layer Thickness ≥0.4 μm Warp ≤35 μm
Void ≤5 ea/wafer (2 mm > D > 0.5 mm) Thickness 350 μm ± 25 μm

Semi-insulating SiC Composite Wafer

Item Specification Item Specification
Diameter 150 ± 0.2 mm Front (Si-face) roughness Ra ≤ 0.2 nm (5 μm × 5 μm)
SiC Type 4H Edge Chip, Scratch, Crack (visual inspection) None
SiC Resistivity 0.015–0.025 Ω·cm TTV ≤3 μm
Transfer layer Thickness ≥0.4 μm Warp ≤35 μm
Void ≤5 ea/wafer (2 mm > D > 0.5 mm) Thickness 500 ± 25 μm

N-type SiC on Si Composite Wafer

Item Specification Item Specification
Diameter 150 ± 0.2 mm Si Orientation <111>/<100>/<110>
SiC Type 4H Si Type P/N
SiC Resistivity 0.015–0.025 Ω·cm Flat length 47.5 ± 1.5 mm
Transfer SiC layer Thickness ≥0.1 μm Edge Chip, Scratch, Crack (visual inspection) None
Void ≤5 ea/wafer (2 mm < D < 0.5 mm) TTV ≤5 μm
Front roughness Ra ≤ 0.2 nm (5 μm × 5 μm) Thickness 500/625/675 ± 25 μm

Semi-insulating SiC on Si Composite Wafer

Item Specification Item Specification
Diameter 150 ± 0.2 mm Si Orientation <111>/<100>/<110>
SiC Type 4H Si Type P/N
SiC Resistivity ≥1E8 Ω·cm Flat/Notch Flat/Notch
Transfer SiC layer Thickness ≥0.1 μm Edge Chip, Scratch, Crack (visual inspection) None
Void ≤5 ea/wafer (2 mm > D > 0.5 mm) TTV ≤5 μm
Front roughness Ra ≤ 0.2 nm (5 μm × 5 μm) Thickness 500/625/675 ± 25 μm

Si on SiC Composite Wafer

Item Specification Item Specification
Diameter 150 ± 0.2 mm SiC Type 4H
Si Orientation <111>/<100>/<110> SiC Resistivity 0.015–0.025/≥1E8 Ω·cm
Si Type P/N Flat/Notch Flat/Notch
Transfer Si layer Thickness ≥0.1 μm Edge Chip, Scratch, Crack (visual inspection) None
Void ≤5 ea / wafer (2 mm > D > 0.5 mm) TTV ≤5 μm
Front roughness Ra ≤ 0.2 nm (5 μm × 5 μm) Thickness 350/500 ± 25 μm

Si on AlN Composite Wafer

Item Specification Item Specification
Diameter 150 ± 0.2 mm AlN Resistivity ≥1E8 Ω·cm
Si Orientation <111>/<100>/<110> AlN Thermal conductivity ≥180 W/m·K
Si Type P/N Flat length 47.5 ± 1.5 mm
Transfer Si layer Thickness ≥0.1 μm TTV ≤5 μm
Edge Chip, Scratch, Crack (visual inspection) None Thickness 625 ± 25 μm
Front roughness Ra ≤ 0.2 nm (5 μm × 5 μm)

SOI Wafer

Size inch 4 5 6 8 12
Active Layer Unit Specification
Manufacturing Method - CZ/FZ
Type / Conductivity - P/N/Non-doped
Crystal Orientation - <100>/<111>/<110>
Dopant - B, P, As, Sb
Thickness μm ≧1.0
*Resistivity Ω·cm 0.001–10000
*Embedded Oxide Film μm 0.05–10
Support Substrate Specification
Manufacturing Method - CZ/FZ
Type / Conductivity - P/N/Non-doped
Crystal Orientation - <100>/<111>/<110>
Dopant - B, P, As, Sb
*Thickness μm JEITA・SEMI Standard/200-1500
*Resistivity Ω·cm 0.001–10000
Remarks *Please inquire separately for detailed specifications.

300-900nm LiNbO3 Single Crystal Thin Film (LNOI)

Lithium Niobate Thin Film

SiO2

Si, LN, Quartz, Fused Silica, etc.

Top Functional Layer Diameter 3, 4, (6) inches Orientation X, Z, Y, etc.
Material LiNbO3 Thickness 300-900 nm
Doping (Optional) MgO
Separation Layer Material SiO2 Thickness 1000-4000 nm
Substrate Material Si, LN, Crystal, Fused Quartz, etc.
Thickness 400-500 μm
Optional Electrode Layer Material Pt, Au, Cr Thickness 100-400 nm
Structure Above or below the SiO2 separation layer

300-900nm LiTaO3 Single Crystal Thin Film (LTOI)

Lithium Tantalate Thin Film

SiO2

Silicon

Top Functional Layer Diameter 3, 4, 6 inches Orientation Y-42, Y-46.3, Z, etc.
Material LiTaO3 Thickness 300-900 nm
Separation Layer Material SiO2 Thickness 300-4000 nm
Substrate Material Si
Thickness 400-500 μm

5-50μm LT & LN thin film on Si substrate

Lithium Tantalate Thin Film

Silicon

Lithium Niobate Thin Film

SiO2

Silicon, Quartz, etc.

Top Functional Layer Diameter 3, 4, 6 inches Orientation Y-42, Y-46.3, Z, etc.
Material LiTaO3 Thickness 300-900 nm
Separation Layer Material SiO2 Thickness 300-4000 nm
Substrate Material Si
Thickness 400-500 μm

20-60μm ultra-thin, super flat wafer

Lithium Tantalate Thin Film Or Lithium Niobate Thin Film

Diameter 3, 4 inches Orientation X, Y, Z, etc.
Thickness 10-60 μm Material LN, LT, Si, etc.
Surface Double-sided or single-sided polishing

Custom-made LN & LT thin film

Top Layer/Details Substrate Details Top Layer Thin Film Details
Multilayer Structure Electrode & Waveguide Pattern Different Materials (SiO2/Si, Si, Sapphire, Quartz, etc.) PPLN Special Sizes Electrodes (Au, Pt, Cr, Al, etc.) Orientation (same as bulk wafer) Doping (MgO, Fe, Er, Tm, etc.)
100-1000 nm LiNbO3
100-1500 nm LiTaO3
5-50 μm LiNbO3
5-50 μm LiTaO3